Characterization and Digital Signal Integrity Analysis of PHEMTs using an Eye Diagram

Fardeen Dendru


Digital Performance analysis of high electron devices used in microwave communication systems is crucial for ensuring their suitability to ever-increasing high-speed data rate applications. This study aims at characterizing a 0.5x200μm dimension pseudomorphic heterojunction transistor and studying the effect of the device characteristics on various parameters of digital bit streams. It has been found that while the device can be predicted to be suitable for a wide range analog bandwidth application however digital application can be satisfactory only in a narrower range only and that a correlation has been established between digital bit rate and various small signal parameters of the device.


Phemt, Gallium Arsenide, Characterization, Digital Signal Integrity, Eye Diagram

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Berroth, M., & Bosch, R. (1990). Broad-band determination of the FET small-signal equivalent circuit. IEEE Transactions On Microwave Theory And Techniques, 38(7), 891-895. doi: 10.1109/22.55781

Breed, G. (2005). Analyzing Signals Using the Eye Diagram. Retrieved 1 June 2020, from

Foster, G. (2004). Anatomy of an Eye Diagram —a Primer. Retrieved 1 June 2020, from

Hamaizia, Z., Sengouga, N., Missous, M., & Yagoub, M. (2010). Small-Signal Modeling of pHEMTs and Analysis of their Microwave Performance. Journal Of Engineering And Applied Sciences, 5(4), 252-256. doi: 10.3923/jeasci.2010.252.256

Jingfeng Ding, Z. A Low Jitter 0.2 μm PHEMT 20 Gb/s 1:2 Demultiplexer. 2005 IEEE Conference On Electron Devices And Solid-State Circuits. doi: 10.1109/edssc.2005.1635241

Kalna, K., Asenov, A., Elgaid, K., & Thayne, I. (2001). Scaling of pHEMTs to Decanano Dimensions. VLSI Design, 13(1-4), 435-439. doi: 10.1155/2001/19759

Ketkar, M., Beyer, J., & Nordman, J. (1999). Gain-frequency characteristics of transistors based on flux flow in hysteretic long Josephson junctions (LJJ). IEEE Transactions On Applied Superconductivity, 9(2), 3949-3952. doi: 10.1109/77.783892

Lee, K., Sze, P., Wang, Y., & Houng, M. (2005). AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric. Solid-State Electronics, 49(2), 213-217. doi: 10.1016/j.sse.2004.07.011

Luo, L., Liu, J., Wang, G., & Wu, Y. (2020). Small-signal modelling and parameter extraction method for a multigate GaAs pHEMT switch. Journal Of Semiconductors, 41(3), 032102. doi: 10.1088/1674-4926/41/3/032102

National Instruments Website -

Parker, A., & Rathmell, J. (2003). Bias and frequency dependence of FET characteristics. IEEE Transactions On Microwave Theory And Techniques, 51(2), 588-592. doi: 10.1109/tmtt.2002.807819

Robertson, I., & Lucyszyn, S. (2001). RFIC and MMIC design and technology. London: Institution of Electrical Engineers.

Selli, G., Lai, M., Shaofeng Luan, Drewniak, J., Dubroff, R., & Jun Fan et al. Validation of equivalent circuits extracted from S-parameter data for eye-pattern evaluation. 2004 International Symposium On Electromagnetic Compatibility (IEEE Cat. No.04CH37559). doi: 10.1109/isemc.2004.1349879

Sotoodeh, M., Sozzi, L., Vinay, A., Khalid, A., Hu, Z., Rezazadeh, A., & Menozzi, R. (2000). Stepping toward standard methods of small-signal parameter extraction for HBTs. IEEE Transactions On Electron Devices, 47(6), 1139-1151. doi: 10.1109/16.842955

Tayel, M., & Yassin, A. (2009). Parameters Extraction for Pseudomorphic HEMTs Using Genetic Algorithms. 2009 International Conference On Electronic Computer Technology. doi: 10.1109/icect.2009.148

Venkatesha, D.B., Chitrashekaraiah, S. , Rezazadeh, A.A. (2005). Switching characteristics analysis of GaAs HBTs using eye diagram. In High Frequency Postgraduate Student Colloquium, 2005, Leeds, UK, 2005, pp. 39-42.

doi: 10.1109/HFPSC.2005.1566357

Venkatesha, D. B., Chitrashekaraiah, S., Rezazadeh, A. A., & Thiede, A. (2007). Interpreting InGaP/GaAs DHBT eye diagrams using small signal parameters. In Proceedings of the 37th European Microwave Conference, EUMC|Proc. Eur. Microw. Conf., EUMC (pp. 1257-1260). European Microwave Association .

Zhao, D., & Yi, Y. (2018). A 0.45 W 18% PAE E-Band Power Amplifier in 100 nm InGaAs pHEMT Technology. Wireless Communications And Mobile Computing, 2018, 1-6. doi: 10.1155/2018/8234615.



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